发明名称 CHARGED PARTICLE BEAM DRAWING APPARATUS, AND PROXIMITY EFFECT CORRECTION METHOD THEREOF
摘要 <p><P>PROBLEM TO BE SOLVED: To eliminate defect occurring to only a pattern of a local part by a simple technique. <P>SOLUTION: A charged particle beam drawing apparatus 10 that draws a desired pattern by irradiating a sample M coated with resist with a charged particle beam 10a1b forms a map having a plurality of meshes, forms a representative figure having area equal to total area of figures positioned in each mesh, and calculates a proximity effect correction irradiation amount of a charged particle beam of the each mesh based upon the area of the representative figure positioned in the each mesh. When there is a figure which needs to be changed in proximity effect correction irradiation amount, the area of the figure which needs to be changed in proximity effect correction irradiation amount is changed before the representative figure is formed, and a proximity effect correction irradiation amount of a charged particle beam for drawing a pattern corresponding to the figure which needs to be changed in proximity effect correction irradiation amount among calculated proximity effect correction irradiation amounts of charged particle beams is changed. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2011066264(A) 申请公布日期 2011.03.31
申请号 JP20090216469 申请日期 2009.09.18
申请人 NUFLARE TECHNOLOGY INC 发明人 HARA SHIGEHIRO;TAMAMUSHI SHUICHI;KAMIKUBO TAKASHI;HIGURE HITOSHI;SAKAMOTO SHINJI;SAKAI YUSUKE;OKAMOTO YOSHIHIRO;ANPO AKIHITO
分类号 H01L21/027;G03F1/20;G03F1/68;G03F7/20 主分类号 H01L21/027
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