| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device which suppresses diffusion of oxygen from a transparent electrode layer to a microcrystalline silicon p layer, thereby having high electric power generation efficiency. <P>SOLUTION: The photoelectric conversion device 100 includes a transparent electrode layer 2, and at least a photoelectric conversion layer 3 on a substrate 1. The photoelectric conversion layer 3 includes a p-type crystalline silicon layer 41, an i-type crystalline silicon layer 42, and an n-type silicon layer 43. An amorphous silicon layer 7 is disposed adjacent to between the transparent electrode layer 2 and the p-type crystalline silicon layer 41. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
