| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of polishing a semiconductor wafer having a silicon through-via structure, which subjects the semiconductor wafer having the silicon through-via structure to a precise polishing operation of a silicon arrangement and to a precision polishing operation of a conductive material arrangement, and also to provide a polishing composition for use in the method. <P>SOLUTION: The polishing composition contains at least one sort of oxidizer selected from a group of organic alkali compound, sodium chlorite, and potassium bromate, solvents therefor, and polishing particles of silicon oxide. In the method of polishing a semiconductor wafer having a silicon through-via structure, a silicon arrangement present on the surface of the semiconductor wafer and a conductive material arrangement developed from the silicon arrangement by polishing are removed by polishing the surface of the semiconductor wafer having the silicon through-via structure. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
