发明名称 |
NANO-WIRE FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE TRANSISTOR, AND INTEGRATED CIRCUIT INCLUDING THE TRANSISTOR |
摘要 |
Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor.
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申请公布号 |
US2011073842(A1) |
申请公布日期 |
2011.03.31 |
申请号 |
US20090993880 |
申请日期 |
2009.06.05 |
申请人 |
NATIONAL INSTITUE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
LIU YONGXUN;MATSUKAWA TAKASHI;ENDO KAZUHIKO;OUCHI SHINICHI;SAKAMOTO KUNIHIRO;MASAHARA MEISHOKU |
分类号 |
H01L29/786;B82Y99/00;H01L21/84 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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