STRUCTURE AND PROCESS FOR PRODUCING SAME

摘要

Provided is a structure having improved electrical reliability. The structure includes a first inorganic insulating layer (11a) which comprises amorphous-state silicon oxide and has a modulus of 45 GPa or lower. Also provided is a process for producing a structure, the process comprising the step of applying an inorganic insulating sol (11x) containing first inorganic insulating particles (14a) constituted of amorphous-state silicon oxide and the step of heating the first inorganic insulating particles (14a) at a temperature lower than the crystallization initiation temperature of the silicon oxide and connecting the particles to one another to thereby form a first inorganic insulating layer (11a) which comprises amorphous-state silicon oxide and has a modulus of 45 GPa or lower.