| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a novel photoelectric conversion device and a manufacturing method thereof. <P>SOLUTION: The photoelectric conversion device includes: an insulating layer 108 over a light-transmitting base substrate 110; a single crystal semiconductor layer 121 provided with a plurality of depressions which are filled with the insulating layer; a plurality of first impurity semiconductor layers 123a, 123c and 123e formed in stripes having one conductivity type and a plurality of second impurity semiconductor layers 123b, 123d and 123f formed in stripes having a conductivity type which is opposite to the one conductivity type, which are arranged alternately and do not overlap with each other, in a surface layer or over a surface of the single crystal semiconductor layer; first electrodes which are in contact with the first impurity semiconductor layers; and second electrodes which are in contact with the second impurity semiconductor layers. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
