摘要 |
Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100X within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long. |
申请人 |
KLA-TENCOR CORPORATION;CHUANG, YUNG-HO;SOLARZ, RICHARD, W.;SHAFER, DAVID, R.;TSAI, BIN-MING BENJAMIN;BROWN, DAVID, L. |
发明人 |
CHUANG, YUNG-HO;SOLARZ, RICHARD, W.;SHAFER, DAVID, R.;TSAI, BIN-MING BENJAMIN;BROWN, DAVID, L. |