MAGNETIC MEMORY

摘要

Disclosed is a memory cell comprising: a magnetic recording layer comprising a ferromagnetic layer in which the direction of magnetization is inversible; a sense layer comprising a ferromagnetic layer in which the direction of magnetization is fixed; a tunnel barrier layer intercalated between the magnetic recording layer and the sense layer; a first spin supply layer comprising a ferromagnetic layer in which the direction of magnetization is fixed; a first non-magnetic layer intercalated between the magnetic recording layer and the first spin supply layer; a first terminal; a second terminal; and a third terminal. The first terminal is connected to the magnetic recording layer through the sense layer and the tunnel barrier layer. The second terminal is connected to the magnetic recording layer through the first spin supply layer and the first non-magnetic layer. The third terminal is connected to the magnetic recording layer without involving the sense layer, the tunnel barrier layer, the first spin supply layer and the first non-magnetic layer.