| 发明名称 |
METHOD FOR REPROCESSING SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SOI SUBSTRATE |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for reprocessing a semiconductor substrate which increases the number of times of repetitive use of one semiconductor substrate by reducing a margin of the semiconductor substrate after separation when reproducing the semiconductor substrate having a semiconductor film separated into a reproduced semiconductor substrate usable for manufacture of an SOI substrate. <P>SOLUTION: The method for reprocessing the semiconductor substrate includes selectively removing an embrittlement layer and a semiconductor layer left at a peripheral part of the semiconductor substrate after separation using a mixed solution containing a substance functioning as an oxidizing agent oxidizing a semiconductor, a substance dissolving an oxide of the semiconductor, and a substance functioning as a decelerator for the oxidation of the semiconductor and the dissolution of the oxide of the semiconductor. A semiconductor film is separated from the semiconductor substrate using the embrittlement layer formed on the semiconductor substrate by irradiation with a plurality of kinds of ions produced from a hydrogen gas by an ion doping device and including at least H<SB>3</SB><SP>+</SP>ions. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
| 申请公布号 |
JP2011066392(A) |
申请公布日期 |
2011.03.31 |
| 申请号 |
JP20100143072 |
申请日期 |
2010.06.23 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
HANAOKA KAZUYA |
| 分类号 |
H01L21/02;H01L21/20;H01L21/265;H01L21/322;H01L27/12 |
主分类号 |
H01L21/02 |
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