| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device executing stable operation. SOLUTION: The nonvolatile semiconductor memory device has: word lines WL; bit lines BL; and memory cells MC connected to between both the lines at crossing portions where the word lines WL and the bit lines BL cross. The memory cell MC is equipped with: a variable resistance element VR formed of an insulating layer 26, including a metal oxide film 26, and reversibly changing a resistance value by applying energy; and an MIIM diode DI including a metal oxide film 24b and connected in series to the variable resistance element VR. A dielectric constant of the metal oxide film 26 is higher than that of the metal oxide film 24b. The physical film thickness of the metal oxide film 26 is thicker than that of the metal oxide film 24b. COPYRIGHT: (C)2011,JPO&INPIT
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