METHOD OF MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method which can form a semiconductor wafer or a semiconductor device having a high reliability and good characteristics while suppressing autodoping of wafer impurity into an epitaxial layer without causing irregularity in characteristics. SOLUTION: The method includes: holding a wafer in a reaction chamber; controlling the inside of the reaction chamber under a predetermined pressure; rectifying and supplying a process gas onto the wafer from above, while heating and rotating the wafer; controlling an exhaust gas on the wafer containing a surplus process gas and a reaction by-product generated by the process gas so that a main stream speed of the gas on an edge of the wafer is 0.7 to 2.0 m/sec; and discharging the gas toward the outer periphery from above the wafer to form an epitaxial layer on the wafer. COPYRIGHT: (C)2011,JPO&INPIT