SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor apparatus by which the deterioration of rewriting property is suppressed. SOLUTION: In a memory cell region RM, a magnetoresistive element 18 in a semiconductor magnetic storage apparatus is formed in an array shape in a mode that the magnetoresistive element is arranged at a part where a digit line 3 extending in one direction intersects a bit line 32 extending in the direction substantially orthogonal to the digit line 3. The digit line 3 and the bit line 32 have such a wiring structure constituted by covering copper films 3b and 31a to be a wiring body with clad layers 3a and 36a. One end side of the magnetoresistive element 18 is electrically connected to the bit line 32 via a top via 25a formed from a non-magnetic material. COPYRIGHT: (C)2011,JPO&INPIT