发明名称 FILM FOR FORMING SPACER, METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER BONDED BODY, SEMICONDUCTOR WAFER BONDED BODY, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a film for forming a spacer with which a semiconductor wafer bonded body having a semiconductor wafer and a transparent substrate bonded together with a spacer of superior size precision interposed can be manufactured, to provide a method of manufacturing the semiconductor wafer bonded body, to provide the semiconductor wafer bonded body with superior reliability, and to provide a semiconductor device. SOLUTION: The film for forming the spacer satisfies relational expressions ofα<SB>V1</SB>×t<SB>1</SB>+α<SB>V2</SB>×t<SB>2</SB>≤-log<SB>10</SB>(0.2), 5≤t<SB>1</SB>≤200, 5≤t<SB>2</SB>≤400, and 10≤t<SB>1</SB>+t<SB>2</SB>≤405, where t<SB>1</SB>denotes an average thickness [μm] of a support base 11, t<SB>1</SB>denotes an average thickness [μm] of a spacer formation layer 12,α<SB>V1</SB>denotes a coefficient [1/μm] of light absorption of the support base 11 in a wavelength band of exposure light, andα<SB>V2</SB>denotes a coefficient [1/μm] of light absorption of the spacer formation layer 12 in the wavelength band of the exposure light. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011066167(A) 申请公布日期 2011.03.31
申请号 JP20090215057 申请日期 2009.09.16
申请人 SUMITOMO BAKELITE CO LTD 发明人 SATO TOSHIHIRO;KAWADA MASAKAZU;YONEYAMA MASAHIRO;TAKAHASHI TOYOSEI;DEJIMA HIROHISA;SHIRAISHI FUMIHIRO
分类号 H01L21/02;H01L27/14 主分类号 H01L21/02
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