| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device having a structure in which memory cells adjoining each other in a height direction share a word line or a bit line, the nonvolatile memory device being made less in number of processes of forming contacts provided to the nonvolatile memory device than before. SOLUTION: The nonvolatile memory device includes a plurality of bit line contacts BC each connected to one of bit lines BL and a plurality of word line contacts WC each connected to a word line WL, wherein the bit line contacts BC and the word line contacts WC have a plurality of contact parts 81 to 83 formed penetrating contact layers corresponding to formation positions of a plurality of memory layers and connection wiring parts 41-1 and 41-2 connecting the contact parts 81 to 83 adjoining one another in the height direction, and the connection wiring parts 41-1 and 41-2 are formed in contact layers of the same heights between the bit line contacts BC and word line contacts WC. COPYRIGHT: (C)2011,JPO&INPIT
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