SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

Disclosed is a semiconductor device manufacturing method which is provided with: a step of forming a single crystal semiconductor device; a step of bonding the single crystal semiconductor device on a glass substrate (36); a step of forming a TFT on the glass substrate (36); and a step of electrically connecting the single crystal semiconductor device and the TFT to each other. In the step of forming the single crystal semiconductor device, an alignment mark (33A) is provided on the single crystal semiconductor device, in the step of bonding the single crystal semiconductor device, the single crystal semiconductor device is aligned and bonded on the glass substrate (36) corresponding to the machine accuracy of the bonding apparatus, and in the step of forming the TFT, the TFT is aligned and formed on the glass substrate (36), corresponding to the alignment mark (33A) provided on the single crystal semiconductor device. The semiconductor device wherein the single crystal semiconductor device, which is bonded on the glass substrate, and the TFT, which is formed on the glass substrate, are electrically connected to each other can be easily manufactured at low cost by employing the manufacturing method.