发明名称 |
METHOD FOR PRODUCING SPUTTERING TARGET COMPRISING CU-GA ALLOY |
摘要 |
PURPOSE: A method for producing sputtering target comprising Cu-Ga alloy is provided to manufacture high performance thin film by clashing the inactive gas of plasma state with a sputtering target. CONSTITUTION: A method for producing sputtering target comprising Cu-Ga alloy is as follows. A Cu-Ga alloy slab(15) is cut by wire electrospark to make the desire thickness of a sputtering target. The sputtering surface of the cut cross section of Cu-Ga alloy slab is polished. The surface of sputtering target shape is polished to desired surface smoothness.
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申请公布号 |
KR20110033792(A) |
申请公布日期 |
2011.03.31 |
申请号 |
KR20100091654 |
申请日期 |
2010.09.17 |
申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
YAMASHITA KAZUKI;KUMAGAI TOSHIAKI |
分类号 |
C23C14/34;C23C16/06 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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