发明名称 METHOD FOR PRODUCING SPUTTERING TARGET COMPRISING CU-GA ALLOY
摘要 PURPOSE: A method for producing sputtering target comprising Cu-Ga alloy is provided to manufacture high performance thin film by clashing the inactive gas of plasma state with a sputtering target. CONSTITUTION: A method for producing sputtering target comprising Cu-Ga alloy is as follows. A Cu-Ga alloy slab(15) is cut by wire electrospark to make the desire thickness of a sputtering target. The sputtering surface of the cut cross section of Cu-Ga alloy slab is polished. The surface of sputtering target shape is polished to desired surface smoothness.
申请公布号 KR20110033792(A) 申请公布日期 2011.03.31
申请号 KR20100091654 申请日期 2010.09.17
申请人 SUMITOMO CHEMICAL CO., LTD. 发明人 YAMASHITA KAZUKI;KUMAGAI TOSHIAKI
分类号 C23C14/34;C23C16/06 主分类号 C23C14/34
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