| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a micro optical sensor that uses light efficiently at a maximum and has a high S/N ratio, and is suitable to convert infrared rays in the infrared range into a voltage signal. <P>SOLUTION: The optical sensor includes at least a first semiconductor layer 2 provided on a top surface of a semiconductor substrate 1, a third semiconductor layer 4 serving as a light absorbing layer provided on the first semiconductor layer 2, a second semiconductor layer 3 provided on the third semiconductor layer 4, and a protection layer 5 provided on a reverse surface of the semiconductor substrate 1. A signal corresponding to the quantity of light incident from the reverse surface of the semiconductor substrate is output in the form of a voltage or current, the reverse surface of the semiconductor substrate is a roughened surface, and the protection layer is provided on the reverse surface of the semiconductor substrate to prevent the reverse surface of the semiconductor substrate from discoloring and also to improve use efficiency of the light. <P>COPYRIGHT: (C)2011,JPO&INPIT |
