| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion source and a method capable of using for a new source material (especially, a thermosensitive material such as new deca-borane and hydride, and a dimer containing compound) which is worthy of production, and to attain a new range of performance in a commercial ion injection of a semiconductor wafer. SOLUTION: The ion source (1) for ion injection system comprises an evaporator (2) which generates a process gas, an electron source (12) which directs electron beams (32) and ionizes the process gas in the ionization filling unit (16), a beam dump (11), an ionization chamber (5), and an extraction aperture (37) to take out the ion beams. The control system can control energy of primary electrons so that individual vapor or gas molecules may be ionized by collision with the primary electrons from mainly an electron gun. COPYRIGHT: (C)2011,JPO&INPIT
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