发明名称 |
CHARGED PARTICLE BEAM DEVICE, AND SAMPLE PREPARATION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To carry out with a high throughput both of a thin-film working of high precision by ion beam irradiation and a STEM observation of high resolution by electron beam irradiation of a sample, without moving the sample. SOLUTION: An irradiation axis of an FIB irradiation system 16 and an irradiation axis of a STEM observation electron beam irradiation system 5 are made almost orthogonal, and the sample 7 is arranged at the intersection position and the FIB cross-section working face of the sample is made a thin-film face of the STEM observation sample. Transmission-scattering beam detection means 9a, 9b are arranged at the rear part of the sample viewed from electron beam irradiation direction on the electron beam irradiation axis. COPYRIGHT: (C)2011,JPO&INPIT
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申请公布号 |
JP2011066005(A) |
申请公布日期 |
2011.03.31 |
申请号 |
JP20100249900 |
申请日期 |
2010.11.08 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
ISHITANI TORU;ONISHI TAKESHI;SATO MITSUGI;TAKEUCHI KOICHIRO |
分类号 |
H01J37/22;H01J37/28;H01J37/317 |
主分类号 |
H01J37/22 |
代理机构 |
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地址 |
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