发明名称 CHARGED PARTICLE BEAM DEVICE, AND SAMPLE PREPARATION METHOD
摘要 PROBLEM TO BE SOLVED: To carry out with a high throughput both of a thin-film working of high precision by ion beam irradiation and a STEM observation of high resolution by electron beam irradiation of a sample, without moving the sample. SOLUTION: An irradiation axis of an FIB irradiation system 16 and an irradiation axis of a STEM observation electron beam irradiation system 5 are made almost orthogonal, and the sample 7 is arranged at the intersection position and the FIB cross-section working face of the sample is made a thin-film face of the STEM observation sample. Transmission-scattering beam detection means 9a, 9b are arranged at the rear part of the sample viewed from electron beam irradiation direction on the electron beam irradiation axis. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2011066005(A) 申请公布日期 2011.03.31
申请号 JP20100249900 申请日期 2010.11.08
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 ISHITANI TORU;ONISHI TAKESHI;SATO MITSUGI;TAKEUCHI KOICHIRO
分类号 H01J37/22;H01J37/28;H01J37/317 主分类号 H01J37/22
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