| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor comprising a normally-off type nitride semiconductor capable of obtaining a large enough current density, and a manufacturing method of the same. SOLUTION: On a substrate 101, an AIN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type GaN layer 105 and a high concentration p-type GaN layer 106 are formed sequentially, and a gate electrode 111 has an ohmic junction to the high concentration p-type GaN layer 106. A source electrode 109 and a drain electrode 110 are provided on the undoped AlGaN layer 104. The pn-junction generated by the two-dimensional electron gas generated at the interface between the undoped AlGaN layer 104 and the undoped GaN layer and by the p-type GaN layer 105 is formed at a gate region to be capable of enlarging the gate voltage. COPYRIGHT: (C)2011,JPO&INPIT |
