| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently generate a crack on a deposition film in a reactor, thereby suppressing the separation of the deposition film and production of particles during a film formation processing. SOLUTION: The method of manufacturing a semiconductor device includes steps of: carrying a substrate in a reactor set at a first temperature; setting the inside of the reactor at a second temperature higher than the first temperature; performing a film formation processing to the substrate in the reactor set at the second temperature; carrying the substrate after the film formation processing out of the inside of the reactor; subjecting the inside of the reactor to gas purge while dropping the temperature in the reactor to a third temperature lower than the first temperature by forcibly cooling the inside of the reactor in the state where no substrate is present in the reactor after the substrate after the film formation processing is carried our; and subjecting the inside of the reactor to gas purge while the temperature in the reactor is maintained at the third temperature for a predetermined period. By keeping the temperature in the reactor at the third temperature for the predetermined period, a crack is effectively generated by a deposition film adhering to the inside of the reactor, and minute particles generated by the crack are efficiently discharged to the outside of the reactor. COPYRIGHT: (C)2011,JPO&INPIT |
