| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves temperature detection with high response by a temperature detection element, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes a diode 7 that is formed on a semiconductor substrate and serves as a temperature detection element to detect abnormal heat generation, and a thermal conduction layer 102 that is formed between the diode 7 and the semiconductor substrate and has a thermal conductivity higher than that of the semiconductor substrate. In this way, heat generated in a heat generating portion can be swiftly and uniformly conducted over the entire temperature detection element composed of the diode 7 with efficiency. <P>COPYRIGHT: (C)2011,JPO&INPIT |
