| 摘要 |
PROBLEM TO BE SOLVED: To provide a film formation method which can highly suppress a leak current and also can keep a leak characteristic highly while keeping throughput highly. SOLUTION: The film formation method is used to form a gate insulation film interposed between the surface of a workpiece and a gate electrode, and includes an interface film formation step S1 of forming an interface film containing silicon at a specified temperature, a cooling step S2 of cooling the workpiece, and a gate insulation film formation step S3 of forming a gate insulation film on the cooled workpiece at a lower temperature than a specified temperature in the interface film formation step. COPYRIGHT: (C)2011,JPO&INPIT
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