| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leakage current while applying compressive stress to a channel forming region of a P-channel transistor by using an SiGe layer. SOLUTION: A semiconductor device 120 has a P-channel transistor including: a source region and drain region 122 formed on the surface of a semiconductor substrate 100; and a gate electrode 102 formed on a channel forming region, sandwiched by the source region and drain region, via a gate insulating film 101. A recess is formed in the semiconductor substrate 100 at each of both sides of the gate electrode 102. Each of the recesses includes: a first epitaxial layer 111 comprising SiGe; a second epitaxial layer 112 formed on the first epitaxial layer and comprising Si; and a third epitaxial layer 113 formed on the second epitaxial layer, comprising SiGe, and sandwiching the channel forming region therebetween. The source region and the drain region 122 are formed in the third epitaxial layer 113 and configured such that their junction depth is set shallower than the depth of the third epitaxial layer 133. COPYRIGHT: (C)2011,JPO&INPIT
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