发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 According to an embodiment, there is provided a semiconductor device including a semiconductor substrate having a first surface on which an active layer having a light receiving portion is provided and a second surface to be a light receiving surface for the light receiving portion, a wiring layer provided on the active layer, an insulating layer provided to cover the wiring layer, and a supporting substrate joined to the semiconductor substrate via the insulating layer to face the first surface of the semiconductor substrate. A joined body of the semiconductor substrate and the supporting substrate includes an intercalated portion provided between its outer peripheral surface and the active surface. The intercalated portion is provided to penetrate the semiconductor substrate and the insulating layer from the second surface of the semiconductor substrate and to reach inside the supporting substrate.
申请公布号 US2011073983(A1) 申请公布日期 2011.03.31
申请号 US20100883674 申请日期 2010.09.16
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TANIDA KAZUMASA;TAKUBO CHIAKI;NUMATA HIDEO;IMORI YOSHIHISA
分类号 H01L31/16;H01L31/18 主分类号 H01L31/16
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