| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the semiconductor device, in which further reduction in size of the device and reduction of internal resistance are attained while the effects of manufacturing at low cost and improvement of manufacturing efficiency are maintained. <P>SOLUTION: A semiconductor device comprises: a semiconductor element 2; a first wiring layer 3 connected with a first electrode 2a on a side of a first surface A1; a second wiring layer 4 connected with a second electrode 2b at a side of a second surface A2; an insulating layer 5 provided around the semiconductor element 2 excluding the first surface A1 and the second surface A2; a through-hole 6 passing through the side of the first surface A1 and the side of the second surface A2 in the insulating layer 5; a third wiring layer 7 provided at the side of the first surface A1 and connected with the second wiring layer 4; external electrodes 8 provided on the first wiring layer 3 and the third wiring layer 7 respectively; and an enclosure 9 sealing the side of the second surface A2 including the second wiring layer 4 and sealing the periphery of the external electrodes 8 excluding an area exposed at the side of the first surface A1, the semiconductor element 2, the first wiring layer 3, and the third wiring layer 7. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
