发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION OF SEMICONDUCTOR STRUCTURE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide fabrication of a semiconductor crystalline material, or a structure including the semiconductor crystalline material. <P>SOLUTION: The surface of a first semiconductor crystalline material has a reduced roughness. A semiconductor device includes a low defect, strained second semiconductor crystalline material over the surface of the first crystalline material. The surface of the strained second semiconductor crystalline material has a reduced roughness. One example includes obtaining a surface with reduced roughness by creating process parameters that reduce impurities at an interfacial boundary between the first and second semiconductor crystalline materials. In one embodiment, the first semiconductor crystalline material can be confined by an opening in an insulator having an aspect ratio sufficient to trap defects using Aspect Ratio Trapping techniques. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
申请公布号 |
JP2011063502(A) |
申请公布日期 |
2011.03.31 |
申请号 |
JP20100062555 |
申请日期 |
2010.03.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD |
发明人 |
PARK JI-SOO;FIORENZA JAMES G |
分类号 |
C30B25/04;C23C16/04;C23C16/06;C23C16/42;C30B29/08;H01L21/20;H01L21/205 |
主分类号 |
C30B25/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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