| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents erroneous reading after being programmed with high reliability, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor device includes: a gate oxide film 3 formed in a channel area on a semiconductor substrate 1; a gate electrode 4 formed on the gate oxide film 3; and a silicide layer 2 formed on at least the channel area. The silicide layer 2 clads at least part of an area except for the entire gate electrode 4 among the channel areas. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
