| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group-III nitride light-emitting device having at least one p-type layer in an active region. <P>SOLUTION: The group-III nitride light-emitting device includes an n-type layer, a p-type layer, and an active region which can emit light between the p-type layer and the n-type layer. The active region includes at least one additional p-type layer. The p-type layer in the active region can be a quantum well layer or a barrier layer. In some embodiments, both the quantum well layer and the barrier layer in the active region are of p-types. In some embodiments, the average dislocation density of the p-type layer in the active region is lower than approximately 5×10<SP>8</SP>cm<SP>-2</SP>. <P>COPYRIGHT: (C)2011,JPO&INPIT |
