| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition system where, using cobalt amidinate or nickel amidinate as film deposition raw material so as to form a Co film or an Ni film of high film quality in which surface conditions are satisfactory and impurities in the film hardly remains at a low temperature. SOLUTION: A substrate W is stored inside a treatment vessel 1, film deposition raw material comprising cobalt amidinate or nickel amidinate and a reducing agent comprising carboxylic acid are introduced in a gaseous phase state into the treatment vessel state so as to deposit a Co film or an Ni film on the substrate. Further, the storage medium is obtained by storing a program for executing such film deposition method. COPYRIGHT: (C)2011,JPO&INPIT
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