发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, MASK AND SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device answerable to refinement of circuits by correctly connecting adjacent small patterns with each other with excellent reproducibility in connective exposure and a semiconductor device manufactured by this method are proposed. According to this method of manufacturing a semiconductor device, connective exposure is performed by dividing a pattern formed on a semiconductor substrate into a plurality of patterns and exposing the plurality of divided patterns in a connective manner, by forming marks for adjusting arrangement of the patterns to be connected with each other on the semiconductor substrate before exposing patterns of a semiconductor element and connectively exposing the patterns of the semiconductor element in coincidence with the marks for adjusting arrangement.
申请公布号 US2011074049(A1) 申请公布日期 2011.03.31
申请号 US20100965434 申请日期 2010.12.10
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MAEJIMA SHINROKU;SHIRAI SEIICHIRO;MACHIDA TAKAHIRO
分类号 H01L23/544;G03F1/00;G03F1/68;H01L21/027 主分类号 H01L23/544
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