CHARGE TRAPPING MEMORY CELL HAVING BANDGAP ENGINEERED TUNNELING STRUCTURE WITH OXYNITRIDE ISOLATION LAYER

摘要

A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.