Some embodiments include methods of reading memory cells. The memory cells have a write operation that occurs only if a voltage of sufficient absolute value is applied for a sufficient duration of time; and the reading is conducted with a pulse that is of too short of a time duration to be sufficient for the write operation. In some embodiments, the pulse utilized for the reading may have an absolute value of voltage that is greater than or equal to the voltage utilized for the write operation. In some embodiments, the memory cells may comprise non-ohmic devices; such as memristors and diodes.
申请公布号
WO2011037703(A2)
申请公布日期
2011.03.31
申请号
WO2010US45856
申请日期
2010.08.18
申请人
MICRON TECHNOLOGY, INC.;SRINIVASAN, BHASKAR;SANDHU, GURTEJ, S.