METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for forming a metal oxide film having satisfactory surface roughness. SOLUTION: A metal oxide film having a prescribed film thickness is formed on a wafer by performing sets for a prescribed number of times (S7), one set comprising step (S5) of forming a metal film on a wafer by performing cycles for a prescribed number of times, one cycle comprising a step of supplying a raw material including a metal atom into a processing vessel storing a wafer and exhausting air, and a step of supplying a reaction gas into the processing vessel for exhausting air; and step (S6) of supplying an oxidizing gas into the processing vessel for exhausting air to oxidize the metal film. COPYRIGHT: (C)2011,JPO&INPIT