| 发明名称 |
MONOLITHIC PARALLEL INTERCONNECT STRUCTURE |
| 摘要 |
An optoelectronic device having a monolithic interconnect structure includes a continuous anode layer, a discontinuous cathode layer, and an electroactive layer sandwiched between the continuous anode layer and the discontinuous cathode layer.
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| 申请公布号 |
US2011074281(A1) |
申请公布日期 |
2011.03.31 |
| 申请号 |
US20090570024 |
申请日期 |
2009.09.30 |
| 申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
FARQUHAR DONALD SETON;DUGGAL ANIL RAJ;HERZOG MICHAEL SCOTT;YOUMANS JEFFREY MICHAEL;RAKUFF STEFAN;BOYD LINDA ANN |
| 分类号 |
H01J1/63;H01J1/62;H01J9/00 |
主分类号 |
H01J1/63 |
| 代理机构 |
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