发明名称 |
METAL GATE TRANSISTOR WITH RESISTOR |
摘要 |
A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a plurality of secondary resistance structures disposed on the dielectric layer and interlaced with the polysilicon structures.
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申请公布号 |
US2011073957(A1) |
申请公布日期 |
2011.03.31 |
申请号 |
US20090566678 |
申请日期 |
2009.09.25 |
申请人 |
CHIU KAI-LING;LIANG VICTOR-CHIANG;TSENG CHIH-YU;TSENG KUN-SZU;FAN CHENG-WEN;CHIANG HSIN-KAI;HSUEH CHIH-CHEN |
发明人 |
CHIU KAI-LING;LIANG VICTOR-CHIANG;TSENG CHIH-YU;TSENG KUN-SZU;FAN CHENG-WEN;CHIANG HSIN-KAI;HSUEH CHIH-CHEN |
分类号 |
H01L27/06;H01L29/86 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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