发明名称 METAL GATE TRANSISTOR WITH RESISTOR
摘要 A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a plurality of secondary resistance structures disposed on the dielectric layer and interlaced with the polysilicon structures.
申请公布号 US2011073957(A1) 申请公布日期 2011.03.31
申请号 US20090566678 申请日期 2009.09.25
申请人 CHIU KAI-LING;LIANG VICTOR-CHIANG;TSENG CHIH-YU;TSENG KUN-SZU;FAN CHENG-WEN;CHIANG HSIN-KAI;HSUEH CHIH-CHEN 发明人 CHIU KAI-LING;LIANG VICTOR-CHIANG;TSENG CHIH-YU;TSENG KUN-SZU;FAN CHENG-WEN;CHIANG HSIN-KAI;HSUEH CHIH-CHEN
分类号 H01L27/06;H01L29/86 主分类号 H01L27/06
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