| 摘要 |
The present disclosure provides a FinFET device and method of fabricating a FinFET device. The method includes providing a substrate, forming a fin structure on the substrate, forming a gate structure including a gate dielectric and gate electrode, the gate structure overlying a portion of the fin structure, forming a protection layer over another portion of the fin structure, and thereafter performing an implantation process to form source and drain regions.
|
