| 发明名称 |
IMPROVED SELECTIVITY IN A XENON DIFLUORIDE ETCH PROCESS |
| 摘要 |
<p>A method and an apparatus for etching microstructures and the like that provides improved selectivity to surrounding materials when etching silicon using xenon difluoride (XeF2). Etch selectivity is greatly enhanced with the addition of hydrogen to the process chamber.</p> |
| 申请公布号 |
WO2011036496(A1) |
申请公布日期 |
2011.03.31 |
| 申请号 |
WO2010GB51611 |
申请日期 |
2010.09.27 |
| 申请人 |
MEMSSTAR LIMITED;O'HARA, ANTHONY |
发明人 |
O'HARA, ANTHONY |
| 分类号 |
B81C1/00;H01L21/3065;H01L21/3213 |
主分类号 |
B81C1/00 |
| 代理机构 |
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