| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power in which a shape and arrangement of an electrode derivation terminal at points of thinning, heat countermeasure and noise countermeasure are sufficient. <P>SOLUTION: In the semiconductor device for electric power, electrode derivation terminals 4 to 6 of P, N and U are laminated in order of P, N and U from the nearest to circuit boards 2H and 2L over the circuit boards 2H and 2L through insulating materials 9 and 10, and they are formed in flat shapes parallel to the circuit boards in at least a lamination part 11. An inner end connection part 4d and the like in the electrode derivation terminals 4 to 6 of P, N and U are made into internally bent projections. An outer end connection part 4c and the like are arranged on a case 3 of the same side. The lamination part 11 is formed to be wide so that it covers above half MOSFET elements 12H and 12L. The electrode derivation terminals 4 to 6 of P, N and U are constituted to be shown in Figure 5 to Figure 8. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
