| 摘要 |
1,206,859. Semi-conductor devices. WESTINGHOUSE ELECTRIC CORP. 18 Dec., 1968 [29 Dec., 1967], No. 60174/68. Heading H1K. A transistor has a diffused emitter region 18 formed in an epitaxial base region 14 which is itself deposited on an epitaxial collector layer 12 of the same conductivity type as, but higher resistivity than, a substrate 10. The thickness of the base region 14 beneath the emitter region 18 is in the range 2À1-3À9 microns. The collector region of the Si device disclosed comprises a P, Sb or As-doped N-type layer 12 epitaxially formed on an Sb or As-doped N+ body 10, the epitaxial base region 14 containing B as a dopant. P is diffused to form the emitter region 18 and Al electrodes 24 are applied through apertures in an oxide, nitride or carbide layer 26. The device is soldered to a Au-coated Mo, W or Ta body 32 by means of a Au-Si alloy solder 36, and Al, Au or Ag wires 40, 42 are ultrasonically bonded to the electrodes 24. Modifications include the provision by diffusion, alloying or epitaxy of a P+ surface zone 20 in the base region 14 around the emitter region 18, and the cutting of a groove 28 around the active areas of the device by ultra-sonic cavitation and etching.
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