发明名称 |
IMPROVED SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DENSITIES |
摘要 |
Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique. |
申请公布号 |
EP2302681(A1) |
申请公布日期 |
2011.03.30 |
申请号 |
EP20100003084 |
申请日期 |
2010.03.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG, ZHI-YUAN;FIORENZA, JAMES G.;SHEEN, CALVIN;LOCHTEFELD, ANTHONY J. |
分类号 |
H01L27/146;H01L21/02;H01L21/20;H01L31/0352;H01L31/18 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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