发明名称 |
THE MANUFACTURING METHOD OF BACK CONTACT SOLAR CELLS |
摘要 |
PURPOSE: A manufacturing method of back contact solar cells is provided to reduce production costs by performing an annealing process and a sintering process at the same time under hydrogen gas. CONSTITUTION: In a manufacturing method of back contact solar cells, a rear passivation layer having at least opening is formed on the rear side of a conductive silicon substrate(S410). A seed layer contacted with first and second conductive semiconductor areas through opening is formed on the rear passivation(S420). A first electrode paste and a second electrode paste are coated on the seed layer which is formed on opening(S430). A metal component making up the seed layer through a heat treatment and a Si compound layer are formed, and first and second electrode pastes are formed at the same time. A seed layer having no the first and second electrode layer is removed(S450). |
申请公布号 |
KR20110032655(A) |
申请公布日期 |
2011.03.30 |
申请号 |
KR20090090258 |
申请日期 |
2009.09.23 |
申请人 |
LG ELECTRONICS INC. |
发明人 |
LEE, SUNG EUN;SHIM, GOO HWAN;PARK, CHANG SEO |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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