| 摘要 |
PURPOSE: An electro-optical modulator is provided to select at least one shot-wave by controlling voltage supplied a first electrode and a second electrode. CONSTITUTION: An n-type nitride semiconductor layer(210) comprises a first electrode. A p-type nitride semiconductor layer(230) comprises a second electrode. An active layer(220) is arranged between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer and is formed with at least two sub-active layers. Each sub-active layer is formed with the barrier and quantum-well layer which is made of GaN. The quantum-well layer which is made of indium gallium nitride(InGaN) is formed on the barrier. |
