| 发明名称 |
THIN FILM TRANSISTOR INCLUDING OXIDE SEMICONDUCTOR |
| 摘要 |
Provided are: an oxide semiconductor containing Zn, In, Hf, wherein the composition ratio of the content of the Hf atom to the total content of Zn, In, and Hf atoms is 2 to 16 wt%; and a thin film transistor including the oxide semiconductor.
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| 申请公布号 |
EP2302685(A2) |
申请公布日期 |
2011.03.30 |
| 申请号 |
EP20090755046 |
申请日期 |
2009.05.29 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, CHANG-JUNG;KIM, SANG-WOOK;KIM, SUN-IL |
| 分类号 |
H01L29/786 |
主分类号 |
H01L29/786 |
| 代理机构 |
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