| 摘要 |
<p>A Si purification method comprises a process to cause a chemical reaction between low-purity Si and atomic hydrogen to produce a hydrogenated gas population containing hydrogenated B2H6 gas made from the boron (B) that is to be removed and hydrogenated SiH4 gas made from Si, and a process to cause the hydrogenated gas population to collide with a heated object surface, the temperature of which is controlled in the range above the temperature at which the hydrogenated B2H6 gas made from the boron (B) that is to be removed decomposes and below the temperature at which the hydrogenated SiH4 gas made from Si decomposes, whereby the boron (B) that is to be removed is fixed on the heated object surface and is removed from the hydrogen gas population and high-purity Si of higher purity than the low-purity Si is obtained, and thereby low-purity Si can be efficiently purified to high-purity Si to produce photovoltaic cell-grade Si from metal-grade Si.</p> |
