| 摘要 |
The invention is concerned with a high power semiconductor device comprising a substrate (10), a conductive layer (12) on a major surface of the substrate (10), a PD barrier (20) provided as a PD barrier layer along the edges of the conductive layer (12) where the conductive layer is joined to the substrate (10), wherein the PD barrier includes a ceramic material; and concerns a method for manufacturing such a high power semiconductor device. |
