| 摘要 |
1,211,627. Semi-conductor devices. WESTINGHOUSE BRAKE ENGLISH ELECTRIC SEMI-CONDUCTORS Ltd. 8 July, 1969 [6 Aug., 1968], No. 37377/68. Heading H1K. In a method of manufacturing a semi-conductor device, having a relatively high resistivity N type region 6 between two relatively low resistivity P-type regions 4, 5, which extend inwardly from opposed major surfaces 16, 17 of the device, the peripheral edge of the device between rigid contact members secured to the major surfaces has material removed by abrasion so that the edge meets the major surfaces at the rigid members. This peripheral edge is so shaped that where it meets the PN junctions it forms with them an acute angle A on the side of the higher resistivity material. This angle is preferably 20-70 degrees inclusive. The abrasion is performed by sand-blasting, or by the use of an abrasive tool, or by use of a tool fed with an abrasive slurry. The contact member is of aluminium, gold, an alloy of these, or molybdenum.
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