发明名称 Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate
摘要 <p>The invention relates to a method for recycling a substrate with a step-like residue in a first region of its surface, in particular along the edge of the substrate, which protrudes with respect to the surface of a remaining second region of the substrate, and wherein the first region comprises a modified zone, in particular an ion implanted zone, essentially in a plane corresponding to the plane of the surface of the remaining second region of the substrate and/or chamfered towards the edge of the substrate. To prevent the negative impact of contaminants in subsequent laminated wafer fabricating processes, the recycling method comprises a material removal step which is carried out such that the surface of the substrate in the first region is lying lower than the level of the modified zone before the material removal. The invention also relates to a laminated wafer fabricating method using the recycled substrate and to a recycled substrate in which the surface of a first region lies lower than the surface of the second region.</p>
申请公布号 EP2037495(B1) 申请公布日期 2011.03.30
申请号 EP20080290490 申请日期 2008.05.28
申请人 S.O.I. TEC SILICON 发明人 AULNETTE, CECILE;RADOUANE, KHALID
分类号 H01L21/762 主分类号 H01L21/762
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