发明名称 Deposition apparatus and manufacturing method of thin film device.
摘要 [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions. [Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, the vacuum chamber 10 is provided with an inner wall 30 electrically floating, and the neutralizer 40 is arranged on the inner side surface side of the vacuum chamber 10 so as to be distant from the ion gun 38.
申请公布号 EP2302093(A1) 申请公布日期 2011.03.30
申请号 EP20090773295 申请日期 2009.06.16
申请人 SHINCRON CO., LTD. 发明人 SHIONO, ICHIRO;JIANG, YOUSONG;NAGAE, EKISHU;HONDA, HIROMITSU;MURATA, TAKANORI
分类号 C23C14/48;C23C14/00;C23C14/08;C23C14/10;C23C14/22;C23C14/30;G02B1/10;G02B5/28;H01J37/32 主分类号 C23C14/48
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