METHOD FOR FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE,申请号KR20030099697-传众专利搜索

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发明名称	METHOD FOR FORMING GATE ELECTRODE IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR101024251(B1)	申请公布日期	2011.03.29
申请号	KR20030099697	申请日期	2003.12.30
申请人		发明人
分类号	H01L21/8242	主分类号	H01L21/8242
代理机构		代理人
主权项
地址

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